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| BSR302N OptiMOS(R)2 Small-Signal-Transistor Features * N-channel * Enhancement mode * Logic level (4.5V) * Avalanche rated * Footprint compatible to SOT23 * dv /dt rated * Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 23 36 3.7 A V m PG-SC-59 3 1 2 Type BSR302N Package PG-SC-59 Tape and Reel Information L6327 = 3000 pcs. / reel Marking LEs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 C T A=70 C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS dv /dt V GS P tot T j, T stg JESD22-A114-HMB T A=25 C T A=25 C I D=3.7 A, R GS=25 I D=3.7 A, V DS=16 V, di /dt =200 A/s, T j,max=150 C Value 3.7 2.9 14.7 30 mJ Unit A Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 6 20 0.5 -55 ... 150 0 (0V to 250V) 260 C 55/150/56 kV/s V W C Rev. 1.2 page 1 2010-03-25 BSR302N Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA Values typ. max. Unit - - 250 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 A V GS(th) I DSS V DS=VGS , I D=30 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=2.9 A V GS=10 V, I D=3.7 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=3.7 A 30 1.2 1.7 2 1 A V - 26 18 12 100 100 36 23 S nA m Rev. 1.2 page 2 2010-03-25 BSR302N Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 C V GS=0 V, I F=3.7 A, T j=25 C V R=15 V, I F=3.7 A, di F/dt =100 A/s 0.8 13.5 5.0 0.8 14.7 1.2 V ns nC A Q gs Q gd Qg V plateau V DD=15 V, I D=3.7 A, V GS=0 to 5 V 1.6 1.1 4.4 2.9 2.2 1.7 6.6 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=3.7 A, R G=2.7 V GS=0 V, V DS=15 V, f =1 MHz 564 202 28 6.8 3.2 16.2 2.2 750 269 43 ns pF Values typ. max. Unit Rev. 1.2 page 3 2010-03-25 BSR302N 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS10 V 0.6 4 0.5 3 0.4 P tot [W] 0.3 I D [A] 0 40 80 120 160 2 0.2 1 0.1 0 0 0 40 80 120 160 T A [C] T A [C] 3 Safe operating area I D=f(V DS); T A=25 C; D =0 parameter: t p 102 limited by on-state resistance 10 s 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 10 1 100 s 0.5 102 0.2 1 ms 0.1 Z thJA [K/W] 100 0.05 I D [A] 10 ms 10 1 0.02 10 -1 DC 0.01 single pulse 100 10-2 10-3 10 -2 10-1 10 -1 10 0 10 1 10 2 10-4 10-3 10-2 10-1 100 101 V DS [V] t p [s] Rev. 1.2 page 4 2010-03-25 BSR302N 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 16 3.7 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 60 3V 14 7V 4.5 V 50 3.5 V 3.5 V 12 4V 40 R DS(on) [m] 10 3.7 V I D [A] 4V 8 30 4.5 V 6 20 10 V 7V 4 3V 10 2 2.7 V 0 0 1 2 3 0 0 4 8 12 16 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 C 12 15 10 8 10 6 4 g fs [S] 5 25 C 150 C I D [A] 2 0 0 1 2 3 4 0 0 1 2 3 4 V GS [V] I D [A] Rev. 1.2 page 5 2010-03-25 BSR302N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=3.7 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=30 A parameter: I D 40 2.4 2 30 98 % 98 % 1.6 typ R DS(on) [m] 20 typ V GS(th) [V] 1.2 2% 0.8 10 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 Ciss 102 101 Coss 100 25 C C [pF] 102 I F [A] 10-1 150 C, 98% Crss 25 C, 98% 10-2 150 C 101 0 5 10 15 20 10-3 0 0.4 0.8 1.2 1.6 V DS [V] V SD [V] Rev. 1.2 page 6 2010-03-25 BSR302N 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 101 14 Typ. gate charge V GS=f(Q gate); I D=3.7 A pulsed parameter: V DD 10 9 25 C 8 24 V 100 C 7 6 125 C 100 V GS [V] I AV [A] 15 V 5 6V 4 3 2 1 10-1 100 101 102 103 0 0 2 4 6 8 10 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 A 16 Gate charge waveforms 36 V GS Qg 34 V BR(DSS) [V] 32 30 V g s(th) 28 Q g(th) Q gs -60 -20 20 60 100 140 Q sw Q gd Q g ate 26 T j [C] Rev. 1.2 page 7 2010-03-25 BSR302N Package Outline: PG-SC59 1.1 0.1 3 0.1 3x0.4 +0.05 -0.1 3 0.1 M 0.1 0.15 MAX. 0.2 +0.1 0.45 0.15 1 0.95 2 0.95 (0.55) 0.1 M +0.1 0.15 -0.05 0...8 MAX. GPS09473 Footprint: 0.8 1.2 HLG09474 Dimensions in mm Rev. 1.2 0.9 1.3 0.9 page 8 1.6 +0.15 -0.3 2010-03-25 2.8 +0.2 -0.1 BSR302N Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user Rev. 1.2 page 9 2010-03-25 |
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